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    <identifier identifierType="DOI">10.48788/DVUA/BCG5WO</identifier>
    <creators><creator><creatorName>Karbivskyy Volodymyr</creatorName><nameIdentifier schemeURI="https://orcid.org/" nameIdentifierScheme="ORCID">0000-0003-0412-2788</nameIdentifier><affiliation>(SPM&RS Centre)</affiliation></creator><creator><creatorName>Svitlana Smolyak</creatorName><nameIdentifier schemeURI="https://orcid.org/" nameIdentifierScheme="ORCID">0000-0002-5403-4092</nameIdentifier><affiliation>(SPM&RS Centre)</affiliation></creator></creators>
    <titles>
        <title>STM data: Gold Nanoreliefs on Van der Waals Surfaces of InSe Semiconductor Single Crystals Obtained by High-Resolution Scanning Tunneling Microscopy Methods</title>
    </titles>
    <publisher>DataverseUA</publisher>
    <publicationYear>2024</publicationYear>
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    <descriptions>
        <description descriptionType="Abstract">The mechanisms of gold nanorelief formation on the van der Waals surfaces of semiconductor single crystals were investigated using high-resolution scanning tunneling microscopy methods. Vacuum thermal deposition of Au (without sample cooling and inert gases) on the InSe (0001) surface. The volt-ampere characteristics of the tunneling spectra of metallic nanostructures were obtained using a JSPM-4610 tunneling microscope. Electrons with different energies (from the conduction band, valence band, and localized states) participated in the tunneling process. Obtained with the help of a scanning microscope, the I-V characteristics of the tunnel contact with the surface of an arbitrary point make it possible to study the local electrical properties.</description>
    </descriptions>
    <contributors><contributor contributorType="ContactPerson"><contributorName>Smolyak, Svitlana</contributorName><affiliation>(SPM&RS Centre)</affiliation></contributor></contributors>
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