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High-resolution core-level XPS spectra (Cu 2p, Hg 4f, Ge 3d, Se 3d, Se 3p) and valence-band spectra were recorded before and after Ar+ ion sputtering to evaluate the core-level binding energies, chemical state preservation, and structural stability of the Cu2HgGeSe4 surface under ion-beam treatment.","citation:dsDescriptionDate":"2020-08-01"},"citation:datasetContact":{"citation:datasetContactName":"Tkach Vira Andriyvna","citation:datasetContactAffiliation":"Frantsevich Institute for Problems of Materials Science of NAS of Ukraine","citation:datasetContactEmail":"vera.ocheretova@gmail.com"},"citation:producer":{"citation:producerName":"Frantsevych Institute for Problems of Materials Science of NAS of Ukraine","citation:producerAffiliation":"N.A.S. of Ukraine","citation:producerAbbreviation":"IPM NASU / ІПМ НАНУ","citation:producerURL":"https://www.ipms.kyiv.ua/?utm_source=chatgpt.com"},"timePeriodCovered":{"citation:timePeriodCoveredStart":"2019-08-01"},"kindOfData":"XPS experiment dataset","dateOfDeposit":"2026-04-08","citation:depositor":"Tkach, Vira","citation:productionPlace":"Kyiv, Ukraine","title":"Surface chemscal states  of Cu2HgGeSe4  studied  by X-ray photoelectron spectroscopy","citation:productionDate":"2019-09-01","language":"English","citation:notesText":"**In-situ Surface Preparation & Ion Etching Regimes:**\n\n* Preparation Mode: In-situ ion-beam cleaning with Ar+ ions (Ex-situ: No)\n* Ion Gun Voltage (V): 3 kV\n* Etching Current (I): 17 uA\n* Etching Time (t): 5 min\n* Etching Pressure (P): 8x10^-6 mbar\n* Etching Angle (theta): 55 deg\n\n**XPS Measurement & Spectrometer Parameters:**\n\n* System/Analyzer: UHV-Analysis-System SPECS (Germany), Hemispherical Analyzer PHOIBOS 150\n* Excitation Source: Mg K-alpha radiation\n* Characteristic Energy: 1253.6 eV\n* Anode Voltage: 10 kV\n* Emission Current: 100 mA\n* Source Power: 100 W\n* Analysis Chamber Pressure: 4x10^-10 mbar\n* Pass Energy: 30 eV\n* Energy Range (Binding Energy): 1000 eV to -10 eV\n* Step Size: 0.1 eV/step\n* Dwell Time: 0.1 s\n* Geometry: Source Angle: 45 deg; Source-to-sample plane angle: 55 deg; Analyzer axis take-off polar angle: 90 deg (normal emission relative to sample surface)","subject":["Chemistry","Engineering","Physics"],"citation:subtitle":"An XPS and DFT Study","@id":"https://doi.org/10.48788/DVUA/DGS7UW","@type":["ore:Aggregation","schema:Dataset"],"schema:version":"1.1","schema:name":"Surface chemscal states of Cu2HgGeSe4 studied by X-ray photoelectron spectroscopy","schema:dateModified":"2026-08-20 10:03:02.716","schema:datePublished":"2026-08-19","schema:creativeWorkStatus":"RELEASED","schema:license":"http://creativecommons.org/licenses/by/4.0","dvcore:fileTermsOfAccess":{"dvcore:fileRequestAccess":true},"schema:includedInDataCatalog":"DataverseUA","schema:isPartOf":{"schema:name":"Frantsevich Institute for Problems of Materials Science of NAS of Ukraine","@id":"https://opendata.nas.gov.ua/dataverse/ipm","schema:description":"Frantsevych Institute for Problems of Materials Science of NAS of Ukraine is a leading center of scientific and technical developments in the field of theoretical foundations of new materials formation, technology for production and manufacture of products from these materials with special properties to meet the needs of nuclear energy, electronics, aircraft, general chemical, transport and agricultural engineering , direct conversion of energy into electrical, quantum electronics, instrument engineering, automation and other fields of technology.\n\nThe Institute carries out fundamental research and technological developments in the fields of: powder metallurgy and composite materials; physical chemistry of inorganic compounds and solid chemistry; soldering of dissimilar materials; solid state physics; physics of high pressure phases; physicochemistry and technology of structural and functional ceramics; nanostructured materials. 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