{"dcterms:modified":"2024-11-25","dcterms:creator":"DataverseUA","@type":"ore:ResourceMap","@id":"https://opendata.nas.gov.ua/api/datasets/export?exporter=OAI_ORE&persistentId=https://doi.org/10.48788/DVUA/IVKESW","ore:describes":{"citation:keyword":[{"citation:keywordValue":"Semiconductors","citation:keywordVocabulary":"Medical Subject Headings","citation:keywordVocabularyURI":"http://purl.bioontology.org/ontology/MESH/D012666"},{"citation:keywordValue":"electronic structure","citation:keywordVocabulary":"Semanticscience Integrated Ontology","citation:keywordVocabularyURI":"http://semanticscience.org/resource/SIO_001099"},{"citation:keywordValue":"crystal growth method","citation:keywordVocabulary":"Chemical Methods Ontology","citation:keywordVocabularyURI":"http://purl.obolibrary.org/obo/CHMO_0002224"},{"citation:keywordValue":"X-ray photoelectron spectroscopy","citation:keywordVocabulary":"National Cancer Institute Thesaurus","citation:keywordVocabularyURI":"http://ncicb.nci.nih.gov/xml/owl/EVS/Thesaurus.owl#C78871"}],"citation:dateOfCollection":{"citation:dateOfCollectionStart":"2012-10-02","citation:dateOfCollectionEnd":"2012-10-03"},"citation:datasetContact":{"citation:datasetContactName":"O.Y. Khyzhun","citation:datasetContactAffiliation":"Frantsevych Institute for Problems of Materials Science of NAS of Ukraine","citation:datasetContactEmail":"denisyuck.natalia@gmail.com"},"author":[{"citation:authorName":"O.Y. Khyzhun","citation:authorAffiliation":"Frantsevych Institute for Problems of Materials Science of NAS of Ukraine","authorIdentifierScheme":"ORCID","authorIdentifier":"0000-0002-2403-8607"},{"citation:authorName":"N. M. Denysyuk","citation:authorAffiliation":"Frantsevych Institute for Problems of Materials Science of NAS of Ukraine","authorIdentifierScheme":"ORCID","authorIdentifier":"0000-0002-0492-1945"}],"citation:dsDescription":{"citation:dsDescriptionValue":"The X-ray photoelectron core-level and valence-band spectra for pristine and Ar+-ion irradiated surfaces of a Tl3PbBr5 single crystal grown by the Bridgman–Stockbarger method have been measured. The present X-ray photoelectron spectroscopy (XPS) results reveal high chemical stability of Tl3PbBr5 single crystal surface.","citation:dsDescriptionDate":"2012-10-02"},"publication":{"publicationCitation":"O.Y.Khyzhun, V.L.Bekenev, O.V.Parasyuk, S.P.Danylchuk, N.M.Denysyuk, A.O.Fedorchuk, N.AlZayed, I.V.Kityk / Single crystal growth and the electronic structure of orthorhombic Tl3PbBr5: A novel material for non-linear optics // Optical Materials - Volume 35, Issue 5, 2013, P. 1081-1089","publicationIDType":"doi","publicationIDNumber":"10.1016/j.optmat.2012.12.008","publicationURL":"https://doi.org/10.1016/j.optmat.2012.12.008"},"contributor":{"citation:contributorType":"Data Collector","citation:contributorName":"Denysyuk Natalia"},"citation:depositor":"Denysyuk Natalia","kindOfData":"XPS experiment dataset","citation:productionDate":"2012-10-02","subject":["Chemistry","Physics"],"dateOfDeposit":"2022-02-06","title":"XPS experiment dataset for crystal Tl3PbBr5","citation:notesText":"Preparation, etching regimes\nI (etching current) 17 A; V (etching voltage) 3 kV; t (etching time) 5 min; P (etching pressure) 8x10-6 mbar; theta (etching angle) 55; Preparation Ex-situ No; Preparation In-situ Ion beam cleaned with 3 kV Ar ions.\nAnalysis source characteristic energy 1253.6 eV; analysis source power (power) 100 W; analysis source strength\n(emission current) 100 mA; analysis source strength; (anode voltage) 10 kV; analysis pass energy 30 eV; analysis chamber pressure 4x10-10 mbar; start energy (Kinetic Energy) Spectrum start kinetic energy; end energy (Kinetic Energy) Spectrum end kinetic energy; start energy (Binding Energy) 1000; end energy (Binding Energy) -10 eV; eV per step 0.1; Dwell time 0.1; Source Angle 45; Analyzer axis take off polar; angle 90 deg; the angle of inclination of the source to the plane of the sample at measurements of 55 deg","language":"English","citation:distributionDate":"2013-03-10","@id":"https://doi.org/10.48788/DVUA/IVKESW","@type":["ore:Aggregation","schema:Dataset"],"schema:version":"1.1","schema:name":"XPS experiment dataset for crystal Tl3PbBr5","schema:dateModified":"2024-11-25 20:15:35.812","schema:datePublished":"2023-10-06","schema:license":"http://creativecommons.org/publicdomain/zero/1.0","dvcore:fileTermsOfAccess":{"dvcore:fileRequestAccess":false},"schema:includedInDataCatalog":"DataverseUA","schema:isPartOf":{"schema:name":"UHV ANALYSIS SYSTEM Centre","@id":"https://opendata.nas.gov.ua/dataverse/ipmUHVAS","schema:description":"Center for collective use of appliances \"High-vacuum analytical system UHV-ANALYSIS-SYSTEM\" is designed to conduct research in the field of electronic structure, elemental and phase composition of the surface of solids without their destruction. This center was created on the basis of Frantsevych Institute for Problems of Materials Science of the National Academy of Sciences of Ukraine for the rational use of modern equipment by scientific institutions and organizations of the National Academy of Sciences of Ukraine. The main task of the Center \" High-vacuum analytical system UHV-ANALYSIS-SYSTEM\" is to provide scientists of the NAS of Ukraine the opportunity to conduct research on modern devices, which are serviced by qualified personnel capable of maintaining equipment in high quality working conditions and provide consulting services.\nTechniques used in the center: 1) X-ray photoelectron spectroscopy; 2) ultraviolet spectroscopy, Auger spectroscopy; 3) diffraction of slow electrons.\nElements analyzed: all except hydrogen.\n","schema:isPartOf":{"schema:name":"Frantsevych Institute for Problems of Materials Science of NAS of Ukraine","@id":"https://opendata.nas.gov.ua/dataverse/ipm","schema:description":"Frantsevych Institute for Problems of Materials Science of NAS of Ukraine is a leading center of scientific and technical developments in the field of theoretical foundations of new materials formation, technology for production and manufacture of products from these materials with special properties to meet the needs of nuclear energy, electronics, aircraft, general chemical, transport and agricultural engineering , direct conversion of energy into electrical, quantum electronics, instrument engineering, automation and other fields of technology.\n\nThe Institute carries out fundamental research and technological developments in the fields of: powder metallurgy and composite materials; physical chemistry of inorganic compounds and solid chemistry; soldering of dissimilar materials; solid state physics; physics of high pressure phases; physicochemistry and technology of structural and functional ceramics; nanostructured materials. The institution has developed the scientific basis of advanced technologies for obtaining, processing and combining materials with a specified set of properties.","schema:isPartOf":{"schema:name":"DataverseUA","@id":"https://opendata.nas.gov.ua/dataverse/dataverseua","schema:description":"Data repository of the institutes of the National Academy of Sciences of Ukraine."}}},"ore:aggregates":[{"schema:description":"contains data obtained for common 4d - electrons, uncoated surface","schema:name":"Tl3PbBr5-4d.txt","dvcore:restricted":false,"schema:version":1,"dvcore:datasetVersionId":18,"dvcore:categories":["Data"],"@id":"doi:10.48788/DVUA/IVKESW/LKVKHZ","schema:sameAs":"https://opendata.nas.gov.ua/api/access/datafile/:persistentId?persistentId=doi:10.48788/DVUA/IVKESW/LKVKHZ","@type":"ore:AggregatedResource","schema:fileFormat":"text/plain","dvcore:filesize":12530,"dvcore:storageIdentifier":"local://17ed0da1da5-5093d07cb4fe","dvcore:rootDataFileId":-1,"dvcore:checksum":{"@type":"MD5","@value":"6c7f81d412b38f0778143498c1c81fc2"}},{"schema:description":"contains data obtained for total 4f - electrons, uncoated surface","schema:name":"Tl3PbBr5-4f.txt","dvcore:restricted":false,"schema:version":1,"dvcore:datasetVersionId":18,"dvcore:categories":["Data"],"@id":"doi:10.48788/DVUA/IVKESW/WVBJ6U","schema:sameAs":"https://opendata.nas.gov.ua/api/access/datafile/:persistentId?persistentId=doi:10.48788/DVUA/IVKESW/WVBJ6U","@type":"ore:AggregatedResource","schema:fileFormat":"text/plain","dvcore:filesize":7218,"dvcore:storageIdentifier":"local://17ed0da1fb7-9cf52a32cec2","dvcore:rootDataFileId":-1,"dvcore:checksum":{"@type":"MD5","@value":"63f9951cb9452a23e07ed1d7c06e0c99"}},{"schema:description":"contains data obtained for total 4d - electrons, after surface treatment with argon","schema:name":"Tl3PbBr5-Ar_4d.txt","dvcore:restricted":false,"schema:version":1,"dvcore:datasetVersionId":18,"dvcore:categories":["Data"],"@id":"doi:10.48788/DVUA/IVKESW/QAIHPY","schema:sameAs":"https://opendata.nas.gov.ua/api/access/datafile/:persistentId?persistentId=doi:10.48788/DVUA/IVKESW/QAIHPY","@type":"ore:AggregatedResource","schema:fileFormat":"text/plain","dvcore:filesize":12052,"dvcore:storageIdentifier":"local://17ed0da2124-b163b5e266d1","dvcore:rootDataFileId":-1,"dvcore:checksum":{"@type":"MD5","@value":"6cb3c04647f3580c7c808a5a0419acbd"}},{"schema:description":"contains data obtained for total 4f - electrons after surface treatment with argon","schema:name":"Tl3PbBr5-Ar_4f.txt","dvcore:restricted":false,"schema:version":1,"dvcore:datasetVersionId":18,"dvcore:categories":["Data"],"@id":"doi:10.48788/DVUA/IVKESW/VYGV9L","schema:sameAs":"https://opendata.nas.gov.ua/api/access/datafile/:persistentId?persistentId=doi:10.48788/DVUA/IVKESW/VYGV9L","@type":"ore:AggregatedResource","schema:fileFormat":"text/plain","dvcore:filesize":7252,"dvcore:storageIdentifier":"local://17ed0da22bc-d6dedbd985ab","dvcore:rootDataFileId":-1,"dvcore:checksum":{"@type":"MD5","@value":"f8d66a2b06b8e76f9e218946a1863d3e"}},{"schema:description":"contains data obtained for Br 3d – electrons, after surface treatment with argon","schema:name":"Tl3PbBr5-Ar_Br_3d.txt","dvcore:restricted":false,"schema:version":1,"dvcore:datasetVersionId":18,"dvcore:categories":["Data"],"@id":"doi:10.48788/DVUA/IVKESW/MYYXVF","schema:sameAs":"https://opendata.nas.gov.ua/api/access/datafile/:persistentId?persistentId=doi:10.48788/DVUA/IVKESW/MYYXVF","@type":"ore:AggregatedResource","schema:fileFormat":"text/plain","dvcore:filesize":4253,"dvcore:storageIdentifier":"local://17ed0da243a-172f5e176026","dvcore:rootDataFileId":-1,"dvcore:checksum":{"@type":"MD5","@value":"89c7b851c311912d4110f0b8459213b4"}},{"schema:description":"- contains data obtained for Br p - electrons after surface treatment with argon","schema:name":"Tl3PbBr5-Ar_Br_p.txt","dvcore:restricted":false,"schema:version":1,"dvcore:datasetVersionId":18,"dvcore:categories":["Data"],"@id":"doi:10.48788/DVUA/IVKESW/5Z68D0","schema:sameAs":"https://opendata.nas.gov.ua/api/access/datafile/:persistentId?persistentId=doi:10.48788/DVUA/IVKESW/5Z68D0","@type":"ore:AggregatedResource","schema:fileFormat":"text/plain","dvcore:filesize":3857,"dvcore:storageIdentifier":"local://17ed0da25f4-d2b4d0c6191a","dvcore:rootDataFileId":-1,"dvcore:checksum":{"@type":"MD5","@value":"30a9926fdf0a0e18073df9104f1b047e"}},{"schema:description":"contains data obtained for C 1s - electrons, after surface treatment with argon","schema:name":"Tl3PbBr5-Ar_C1s.txt","dvcore:restricted":false,"schema:version":1,"dvcore:datasetVersionId":18,"dvcore:categories":["Data"],"@id":"doi:10.48788/DVUA/IVKESW/TEVCJX","schema:sameAs":"https://opendata.nas.gov.ua/api/access/datafile/:persistentId?persistentId=doi:10.48788/DVUA/IVKESW/TEVCJX","@type":"ore:AggregatedResource","schema:fileFormat":"text/plain","dvcore:filesize":4161,"dvcore:storageIdentifier":"local://17ed0da2793-df3c8e019ca8","dvcore:rootDataFileId":-1,"dvcore:checksum":{"@type":"MD5","@value":"de6dc9ec0488485073754009b8454a4d"}},{"schema:description":"contains general data obtained after surface treatment with argon","schema:name":"Tl3PbBr5-Ar_Survey.txt","dvcore:restricted":false,"schema:version":1,"dvcore:datasetVersionId":18,"dvcore:categories":["Data"],"@id":"doi:10.48788/DVUA/IVKESW/8G4ORR","schema:sameAs":"https://opendata.nas.gov.ua/api/access/datafile/:persistentId?persistentId=doi:10.48788/DVUA/IVKESW/8G4ORR","@type":"ore:AggregatedResource","schema:fileFormat":"text/plain","dvcore:filesize":13329,"dvcore:storageIdentifier":"local://17ed0da2937-813fa6270025","dvcore:rootDataFileId":-1,"dvcore:checksum":{"@type":"MD5","@value":"34c2a0950fe6682f40600dc4a1caecf6"}},{"schema:description":"contains data obtained for valence band electrons after surface treatment with argon","schema:name":"Tl3PbBr5-Ar_VB.txt","dvcore:restricted":false,"schema:version":1,"dvcore:datasetVersionId":18,"dvcore:categories":["Data"],"@id":"doi:10.48788/DVUA/IVKESW/ITNN5E","schema:sameAs":"https://opendata.nas.gov.ua/api/access/datafile/:persistentId?persistentId=doi:10.48788/DVUA/IVKESW/ITNN5E","@type":"ore:AggregatedResource","schema:fileFormat":"text/plain","dvcore:filesize":4611,"dvcore:storageIdentifier":"local://17ed0da2abd-51ab7c75fa8c","dvcore:rootDataFileId":-1,"dvcore:checksum":{"@type":"MD5","@value":"9c4d3d7128f0b3418bdea68e5bf8a65c"}},{"schema:description":"contains data obtained for Br 3d - electrons, uncoated surface","schema:name":"Tl3PbBr5-Br_3d.txt","dvcore:restricted":false,"schema:version":1,"dvcore:datasetVersionId":18,"dvcore:categories":["Data"],"@id":"doi:10.48788/DVUA/IVKESW/7MTAAP","schema:sameAs":"https://opendata.nas.gov.ua/api/access/datafile/:persistentId?persistentId=doi:10.48788/DVUA/IVKESW/7MTAAP","@type":"ore:AggregatedResource","schema:fileFormat":"text/plain","dvcore:filesize":4238,"dvcore:storageIdentifier":"local://17ed0da2c63-35d11e362d8e","dvcore:rootDataFileId":-1,"dvcore:checksum":{"@type":"MD5","@value":"d5f5c4c4d69fb2d35791843dccc7fc2c"}},{"schema:description":"contains data obtained for Br p - electrons, uncoated surface","schema:name":"Tl3PbBr5-Br_p.txt","dvcore:restricted":false,"schema:version":1,"dvcore:datasetVersionId":18,"dvcore:categories":["Data"],"@id":"doi:10.48788/DVUA/IVKESW/AE6UJA","schema:sameAs":"https://opendata.nas.gov.ua/api/access/datafile/:persistentId?persistentId=doi:10.48788/DVUA/IVKESW/AE6UJA","@type":"ore:AggregatedResource","schema:fileFormat":"text/plain","dvcore:filesize":3806,"dvcore:storageIdentifier":"local://17ed0da2dee-244de8cabe6e","dvcore:rootDataFileId":-1,"dvcore:checksum":{"@type":"MD5","@value":"70ae0b939b9a0d40e421dd277fdd5608"}},{"schema:description":"contains data obtained for C 1s - electrons, uncoated surface","schema:name":"Tl3PbBr5-C1s.txt","dvcore:restricted":false,"schema:version":1,"dvcore:datasetVersionId":18,"dvcore:categories":["Data"],"@id":"doi:10.48788/DVUA/IVKESW/UOZEUJ","schema:sameAs":"https://opendata.nas.gov.ua/api/access/datafile/:persistentId?persistentId=doi:10.48788/DVUA/IVKESW/UOZEUJ","@type":"ore:AggregatedResource","schema:fileFormat":"text/plain","dvcore:filesize":3727,"dvcore:storageIdentifier":"local://17ed0da2f81-59de699dd3ba","dvcore:rootDataFileId":-1,"dvcore:checksum":{"@type":"MD5","@value":"17e7b6972846db2a88b6d8ce3b529efb"}},{"schema:description":"contains data obtained for electrons of the valence band of the uncoated surface","schema:name":"Tl3PbBr5-VB.txt","dvcore:restricted":false,"schema:version":1,"dvcore:datasetVersionId":18,"dvcore:categories":["Data"],"@id":"doi:10.48788/DVUA/IVKESW/RWDDK5","schema:sameAs":"https://opendata.nas.gov.ua/api/access/datafile/:persistentId?persistentId=doi:10.48788/DVUA/IVKESW/RWDDK5","@type":"ore:AggregatedResource","schema:fileFormat":"text/plain","dvcore:filesize":4751,"dvcore:storageIdentifier":"local://17ed0da3285-21fb41d6d100","dvcore:rootDataFileId":-1,"dvcore:checksum":{"@type":"MD5","@value":"151956d31635a71c8e745ea911cf04f0"}},{"schema:description":"contains general data obtained for an uncoated surface","schema:name":"Tl3PbBr5_Survey.txt","dvcore:restricted":false,"schema:version":1,"dvcore:datasetVersionId":18,"dvcore:categories":["Data"],"@id":"doi:10.48788/DVUA/IVKESW/P2MHSC","schema:sameAs":"https://opendata.nas.gov.ua/api/access/datafile/:persistentId?persistentId=doi:10.48788/DVUA/IVKESW/P2MHSC","@type":"ore:AggregatedResource","schema:fileFormat":"text/plain","dvcore:filesize":13245,"dvcore:storageIdentifier":"local://18ad215d1e7-4669809c54e5","dvcore:rootDataFileId":-1,"dvcore:checksum":{"@type":"MD5","@value":"6aeee83b96f5cc5788b3b20bec3b85f0"}}],"schema:hasPart":["doi:10.48788/DVUA/IVKESW/LKVKHZ","doi:10.48788/DVUA/IVKESW/WVBJ6U","doi:10.48788/DVUA/IVKESW/QAIHPY","doi:10.48788/DVUA/IVKESW/VYGV9L","doi:10.48788/DVUA/IVKESW/MYYXVF","doi:10.48788/DVUA/IVKESW/5Z68D0","doi:10.48788/DVUA/IVKESW/TEVCJX","doi:10.48788/DVUA/IVKESW/8G4ORR","doi:10.48788/DVUA/IVKESW/ITNN5E","doi:10.48788/DVUA/IVKESW/7MTAAP","doi:10.48788/DVUA/IVKESW/AE6UJA","doi:10.48788/DVUA/IVKESW/UOZEUJ","doi:10.48788/DVUA/IVKESW/RWDDK5","doi:10.48788/DVUA/IVKESW/P2MHSC"]},"@context":{"author":"http://purl.org/dc/terms/creator","authorIdentifier":"http://purl.org/spar/datacite/AgentIdentifier","authorIdentifierScheme":"http://purl.org/spar/datacite/AgentIdentifierScheme","citation":"https://dataverse.org/schema/citation/","contributor":"http://purl.org/dc/terms/contributor","dateOfDeposit":"http://purl.org/dc/terms/dateSubmitted","dcterms":"http://purl.org/dc/terms/","dvcore":"https://dataverse.org/schema/core#","kindOfData":"http://rdf-vocabulary.ddialliance.org/discovery#kindOfData","language":"http://purl.org/dc/terms/language","ore":"http://www.openarchives.org/ore/terms/","publication":"http://purl.org/dc/terms/isReferencedBy","publicationCitation":"http://purl.org/dc/terms/bibliographicCitation","publicationIDNumber":"http://purl.org/spar/datacite/ResourceIdentifier","publicationIDType":"http://purl.org/spar/datacite/ResourceIdentifierScheme","publicationURL":"https://schema.org/distribution","schema":"http://schema.org/","subject":"http://purl.org/dc/terms/subject","title":"http://purl.org/dc/terms/title"}}