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High-resolution core-level XPS spectra (Cu 2p, Hg 4f, Ge 3d, Se 3d, Se 3p) and valence-band spectra were recorded before and after Ar+ ion sputtering to evaluate the core-level binding energies, chemical state preservation, and structural stability of the Cu2HgGeSe4 surface under ion-beam treatment."},"dsDescriptionDate":{"typeName":"dsDescriptionDate","multiple":false,"typeClass":"primitive","value":"2020-08-01"}}]},{"typeName":"subject","multiple":true,"typeClass":"controlledVocabulary","value":["Chemistry","Engineering","Physics"]},{"typeName":"keyword","multiple":true,"typeClass":"compound","value":[{"keywordValue":{"typeName":"keywordValue","multiple":false,"typeClass":"primitive","value":"Semiconductors"},"keywordVocabularyURI":{"typeName":"keywordVocabularyURI","multiple":false,"typeClass":"primitive","value":"https://www.dictionary.com/browse/semiconductor"}},{"keywordValue":{"typeName":"keywordValue","multiple":false,"typeClass":"primitive","value":"X-ray photoelectronic spectra"},"keywordVocabulary":{"typeName":"keywordVocabulary","multiple":false,"typeClass":"primitive","value":"AIP Physics and Astronomy Classification Scheme (PACS)"},"keywordVocabularyURI":{"typeName":"keywordVocabularyURI","multiple":false,"typeClass":"primitive","value":"https://meshb.nlm.nih.gov/record/ui?ui=D018625"}},{"keywordValue":{"typeName":"keywordValue","multiple":false,"typeClass":"primitive","value":"Electronic structure"},"keywordVocabularyURI":{"typeName":"keywordVocabularyURI","multiple":false,"typeClass":"primitive","value":"https://surl.li/iwyvei"}}]},{"typeName":"topicClassification","multiple":true,"typeClass":"compound","value":[{"topicClassValue":{"typeName":"topicClassValue","multiple":false,"typeClass":"primitive","value":"Semiconductors"},"topicClassVocab":{"typeName":"topicClassVocab","multiple":false,"typeClass":"primitive","value":"ASJC (All Science Journal Classification)"}},{"topicClassValue":{"typeName":"topicClassValue","multiple":false,"typeClass":"primitive","value":"Condensed Matter Physics"},"topicClassVocab":{"typeName":"topicClassVocab","multiple":false,"typeClass":"primitive","value":"LCSH (Library of Congress Subject Headings)"}},{"topicClassValue":{"typeName":"topicClassValue","multiple":false,"typeClass":"primitive","value":"Surface Science"},"topicClassVocab":{"typeName":"topicClassVocab","multiple":false,"typeClass":"primitive","value":"LCSH (Library of Congress Subject Headings)"}}]},{"typeName":"publication","multiple":true,"typeClass":"compound","value":[{"publicationCitation":{"typeName":"publicationCitation","multiple":false,"typeClass":"primitive","value":"B.V. Gabrelian, A.A. Lavrentyev, Tuan V. Vu, V.A. Tkach, O.V. Marchuk, K.F. Kalmykova, L.N. Ananchenko, O.V. Parasyuk, O.Y. Khyzhun,\nQuaternary Cu2HgGeSe4 selenide: Its electronic and optical properties as elucidated from TB-mBJ band-structure calculations and XPS and XES measurements, Chemical Physics, Volume 536, 2020, 110821, ISSN 0301-0104,\nhttps://doi.org/10.1016/j.chemphys.2020.110821.\n(https://www.sciencedirect.com/science/article/pii/S0301010420300021)"},"publicationIDType":{"typeName":"publicationIDType","multiple":false,"typeClass":"controlledVocabulary","value":"doi"},"publicationIDNumber":{"typeName":"publicationIDNumber","multiple":false,"typeClass":"primitive","value":"10.1016/j.chemphys.2020.110821"},"publicationURL":{"typeName":"publicationURL","multiple":false,"typeClass":"primitive","value":"https://doi.org/10.1016/j.chemphys.2020.110821"}}]},{"typeName":"notesText","multiple":false,"typeClass":"primitive","value":"**In-situ Surface Preparation & Ion Etching Regimes:**\n\n* Preparation Mode: In-situ ion-beam cleaning with Ar+ ions (Ex-situ: No)\n* Ion Gun Voltage (V): 3 kV\n* Etching Current (I): 17 uA\n* Etching Time (t): 5 min\n* Etching Pressure (P): 8x10^-6 mbar\n* Etching Angle (theta): 55 deg\n\n**XPS Measurement & Spectrometer Parameters:**\n\n* System/Analyzer: UHV-Analysis-System SPECS (Germany), Hemispherical Analyzer PHOIBOS 150\n* Excitation Source: Mg K-alpha radiation\n* Characteristic Energy: 1253.6 eV\n* Anode Voltage: 10 kV\n* Emission Current: 100 mA\n* Source Power: 100 W\n* Analysis Chamber Pressure: 4x10^-10 mbar\n* Pass Energy: 30 eV\n* Energy Range (Binding Energy): 1000 eV to -10 eV\n* Step Size: 0.1 eV/step\n* Dwell Time: 0.1 s\n* Geometry: Source Angle: 45 deg; Source-to-sample plane angle: 55 deg; Analyzer axis take-off polar angle: 90 deg (normal emission relative to sample surface)"},{"typeName":"language","multiple":true,"typeClass":"controlledVocabulary","value":["English"]},{"typeName":"producer","multiple":true,"typeClass":"compound","value":[{"producerName":{"typeName":"producerName","multiple":false,"typeClass":"primitive","value":"Frantsevych Institute for Problems of Materials Science of NAS of Ukraine"},"producerAffiliation":{"typeName":"producerAffiliation","multiple":false,"typeClass":"primitive","value":"N.A.S. of Ukraine"},"producerAbbreviation":{"typeName":"producerAbbreviation","multiple":false,"typeClass":"primitive","value":"IPM NASU / ІПМ НАНУ"},"producerURL":{"typeName":"producerURL","multiple":false,"typeClass":"primitive","value":"https://www.ipms.kyiv.ua/?utm_source=chatgpt.com"}}]},{"typeName":"productionDate","multiple":false,"typeClass":"primitive","value":"2019-09-01"},{"typeName":"productionPlace","multiple":true,"typeClass":"primitive","value":["Kyiv, 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