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High-resolution measurements of core-level and valence-band spectra were performed for the TIHgBr₃ single crystal grown using the Bridgman–Stockbarger method.\nThis dataset allows analysis of the chemical composition and electronic structure of the TIHgBr₃ surface, assessment of the stability of elemental chemical states, and investigation of surface properties. The dataset contains experimental XPS data of the pristine surface only, suitable for comparative analysis and modeling of the electronic structure of halide materials. Spectra after Ar⁺-ion irradiation are not included."},"dsDescriptionDate":{"typeName":"dsDescriptionDate","multiple":false,"typeClass":"primitive","value":"2025-12-05"}}]},{"typeName":"subject","multiple":true,"typeClass":"controlledVocabulary","value":["Chemistry","Physics","Other"]},{"typeName":"keyword","multiple":true,"typeClass":"compound","value":[{"keywordValue":{"typeName":"keywordValue","multiple":false,"typeClass":"primitive","value":"halide semiconductor"},"keywordVocabularyURI":{"typeName":"keywordVocabularyURI","multiple":false,"typeClass":"primitive","value":"https://dictionary.cambridge.org/dictionary/english/semiconductor"}},{"keywordValue":{"typeName":"keywordValue","multiple":false,"typeClass":"primitive","value":"X-ray photoelectron spectroscopy (XPS"},"keywordVocabularyURI":{"typeName":"keywordVocabularyURI","multiple":false,"typeClass":"primitive","value":"https://www.chemicool.com/definition/x_ray_photoelectron_spectroscopy_xps.html?utm_source=chatgpt.com"}},{"keywordValue":{"typeName":"keywordValue","multiple":false,"typeClass":"primitive","value":"Single crystal"},"keywordVocabularyURI":{"typeName":"keywordVocabularyURI","multiple":false,"typeClass":"primitive","value":"https://dictionary.cambridge.org/dictionary/english/crystal"}},{"keywordValue":{"typeName":"keywordValue","multiple":false,"typeClass":"primitive","value":"Valence band"},"keywordVocabularyURI":{"typeName":"keywordVocabularyURI","multiple":false,"typeClass":"primitive","value":"https://dictionary.cambridge.org/dictionary/english/valence-band?q=Valence+band"}},{"keywordValue":{"typeName":"keywordValue","multiple":false,"typeClass":"primitive","value":"Core levels"}},{"keywordValue":{"typeName":"keywordValue","multiple":false,"typeClass":"primitive","value":"Electronic structure"},"keywordVocabularyURI":{"typeName":"keywordVocabularyURI","multiple":false,"typeClass":"primitive","value":"https://chem.libretexts.org/Bookshelves/Physical_and_Theoretical_Chemistry_Textbook_Maps/Supplemental_Modules_%28Physical_and_Theoretical_Chemistry%29/Electronic_Structure_of_Atoms_and_Molecules?utm_source=chatgpt.com"}},{"keywordValue":{"typeName":"keywordValue","multiple":false,"typeClass":"primitive","value":"Chemical state"}},{"keywordValue":{"typeName":"keywordValue","multiple":false,"typeClass":"primitive","value":"TIHgBr₃"}}]},{"typeName":"topicClassification","multiple":true,"typeClass":"compound","value":[{"topicClassValue":{"typeName":"topicClassValue","multiple":false,"typeClass":"primitive","value":"Physical Sciences"},"topicClassVocabURI":{"typeName":"topicClassVocabURI","multiple":false,"typeClass":"primitive","value":"https://api.openaire.eu/vocabularies/dnet:fos/0103%20physical%20sciences"}},{"topicClassValue":{"typeName":"topicClassValue","multiple":false,"typeClass":"primitive","value":"Materials Science"},"topicClassVocabURI":{"typeName":"topicClassVocabURI","multiple":false,"typeClass":"primitive","value":"https://datascience.codata.org/articles/dsj-2021-018?utm_source=chatgpt.com"}}]},{"typeName":"publication","multiple":true,"typeClass":"compound","value":[{"publicationCitation":{"typeName":"publicationCitation","multiple":false,"typeClass":"primitive","value":"Single crystal growth, structure and properties of TlHgBr₃. P. Demchenko, O.Y. Khyzhun, P.M. Fochuk, S.I. Levkovets, G.L. Myronchuk, O.V. Parasyuk/ Optical Materials, Volume 49, November 2015, Pages 94–99. DOI / URL: https://doi.org/10.1016/j.optmat.2015.08.026"},"publicationIDType":{"typeName":"publicationIDType","multiple":false,"typeClass":"controlledVocabulary","value":"doi"},"publicationIDNumber":{"typeName":"publicationIDNumber","multiple":false,"typeClass":"primitive","value":"10.1016/j.optmat.2015.08.026"},"publicationURL":{"typeName":"publicationURL","multiple":false,"typeClass":"primitive","value":"https://doi.org/10.1016/j.optmat.2015.08.026"}},{"publicationCitation":{"typeName":"publicationCitation","multiple":false,"typeClass":"primitive","value":"Electronic structure and basic optical constants of TlHgBr₃: Density functional theory calculations. Tuan V. Vu, Anatoliy A. Lavrentyev, Boris V. Gabrelian, Hien D. Tong, Hai L. Luong, Oleg V. Parasyuk, Yuri M. Kogut, Oleg Y. Khyzhun. Optical Materials, Volume 86, December 2018, Pages 191–197. DOI / URL: https://doi.org/10.1016/j.optmat.2018.10.019"},"publicationIDType":{"typeName":"publicationIDType","multiple":false,"typeClass":"controlledVocabulary","value":"doi"},"publicationIDNumber":{"typeName":"publicationIDNumber","multiple":false,"typeClass":"primitive","value":"10.1016/j.optmat.2018.10.019"},"publicationURL":{"typeName":"publicationURL","multiple":false,"typeClass":"primitive","value":"https://doi.org/10.1016/j.optmat.2018.10.019"}}]},{"typeName":"notesText","multiple":false,"typeClass":"primitive","value":"Preparation, etching regimes\nI (etching current) 17 A; V (etching voltage) 3 kV; t (etching time) 5 min; P (etching pressure) 8x10-6 mbar; theta (etching angle) 55; Preparation Ex-situ No; Preparation In-situ Ion beam cleaned with 3 kV Ar ions.\nAnalysis source characteristic energy 1253.6 eV; analysis source power (power) 100 W; analysis source strength\n(emission current) 100 mA; analysis source strength; (anode voltage) 10 kV; analysis pass energy 30 eV; analysis chamber pressure 4x10-10 mbar; start energy (Kinetic Energy) Spectrum start kinetic energy; end energy (Kinetic Energy) Spectrum end kinetic energy; start energy (Binding Energy) 1000; end energy (Binding Energy) -10 eV; eV per step 0.1; Dwell time 0.1; Source Angle 45; Analyzer axis take off polar; angle 90 deg; the angle of inclination of the source to the plane of the sample at measurements of 55 deg"},{"typeName":"language","multiple":true,"typeClass":"controlledVocabulary","value":["English"]},{"typeName":"productionPlace","multiple":true,"typeClass":"primitive","value":["Ukraine, Kyiv"]},{"typeName":"contributor","multiple":true,"typeClass":"compound","value":[{"contributorType":{"typeName":"contributorType","multiple":false,"typeClass":"controlledVocabulary","value":"Research Group"},"contributorName":{"typeName":"contributorName","multiple":false,"typeClass":"primitive","value":"UHV ANALYSIS SYSTEM 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