STM data: Gold Nanoreliefs on Van der Waals Surfaces of InSe Semiconductor Single Crystals Obtained by High-Resolution Scanning Tunneling Microscopy Methodshttps://doi.org/10.48788/DVUA/BCG5WOKarbivskyy VolodymyrSvitlana SmolyakDataverseUA2024-10-102025-03-20T19:56:47ZThe mechanisms of gold nanorelief formation on the van der Waals surfaces of semiconductor single crystals were investigated using high-resolution scanning tunneling microscopy methods. Vacuum thermal deposition of Au (without sample cooling and inert gases) on the InSe (0001) surface. The volt-ampere characteristics of the tunneling spectra of metallic nanostructures were obtained using a JSPM-4610 tunneling microscope. Electrons with different energies (from the conduction band, valence band, and localized states) participated in the tunneling process. Obtained with the help of a scanning microscope, the I-V characteristics of the tunnel contact with the surface of an arbitrary point make it possible to study the local electrical properties.PhysicsMonolayersSingle-crystalsScanning tunnelling microscopyL. І. Karbivska, V. L. Karbivskii, V. A. Artemyuk, Z. D. Kovalyuk, О. Ya. Kuznetsova, S. S. Smolyak, A. I. Sobolev, and V. V. Stonis, Nanorelief of Cu and Au Layers after Their Thermal Deposition on the InSe and GaSe Single Crystals Surfaces, Metallofiz. Noveishie Tekhnol., 41, No.3: 297–311 (2019) ttps://doi.org/10.15407/mfint.41.03.0297, doi, 10.15407/mfint.41.03.0297., https://doi.org/10.15407/mfint.41.03.02972024-10-10Smolyak, Svitlana2024-09-032011-04-082011-04-08CC0 1.0