<?xml version='1.0' encoding='UTF-8'?><metadata xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns="http://dublincore.org/documents/dcmi-terms/"><dcterms:title>Surface chemscal states  of Cu2HgGeSe4  studied  by X-ray photoelectron spectroscopy</dcterms:title><dcterms:identifier>https://doi.org/10.48788/DVUA/DGS7UW</dcterms:identifier><dcterms:creator>Tkach, Vira</dcterms:creator><dcterms:creator>O.Y. Khyzhun</dcterms:creator><dcterms:creator>N.M. Denysyuk</dcterms:creator><dcterms:creator>Luzhnyi Ivan Vasyliovych</dcterms:creator><dcterms:creator>Kopylova Kateryna Ihorivna</dcterms:creator><dcterms:publisher>DataverseUA</dcterms:publisher><dcterms:issued>2026-08-19</dcterms:issued><dcterms:modified>2026-08-20T10:03:02Z</dcterms:modified><dcterms:description>The electronic structure and surface chemical states of a Cu2HgGeSe4 single crystal, grown by the Bridgman–Stockbarger method, were investigated using X-ray photoelectron spectroscopy (XPS) for pristine and Ar+ ion-irradiated surfaces. High-resolution core-level XPS spectra (Cu 2p, Hg 4f, Ge 3d, Se 3d, Se 3p) and valence-band spectra were recorded before and after Ar+ ion sputtering to evaluate the core-level binding energies, chemical state preservation, and structural stability of the Cu2HgGeSe4 surface under ion-beam treatment.</dcterms:description><dcterms:subject>Chemistry</dcterms:subject><dcterms:subject>Engineering</dcterms:subject><dcterms:subject>Physics</dcterms:subject><dcterms:subject>Semiconductors</dcterms:subject><dcterms:subject>X-ray photoelectronic spectra</dcterms:subject><dcterms:subject>Electronic structure</dcterms:subject><dcterms:language>English</dcterms:language><dcterms:isReferencedBy>B.V. Gabrelian, A.A. Lavrentyev, Tuan V. Vu, V.A. Tkach, O.V. Marchuk, K.F. Kalmykova, L.N. Ananchenko, O.V. Parasyuk, O.Y. Khyzhun,
Quaternary Cu2HgGeSe4 selenide: Its electronic and optical properties as elucidated from TB-mBJ band-structure calculations and XPS and XES measurements, Chemical Physics, Volume 536, 2020, 110821, ISSN 0301-0104,
https://doi.org/10.1016/j.chemphys.2020.110821.
(https://www.sciencedirect.com/science/article/pii/S0301010420300021), doi, 10.1016/j.chemphys.2020.110821, https://doi.org/10.1016/j.chemphys.2020.110821</dcterms:isReferencedBy><dcterms:date>2019-09-01</dcterms:date><dcterms:contributor>Tkach, Vira</dcterms:contributor><dcterms:contributor>Department 47 of Surface Spectroscopy of Novel Materials, Frantsevich Institute for Problems of Materials Science</dcterms:contributor><dcterms:dateSubmitted>2026-04-08</dcterms:dateSubmitted><dcterms:temporal>2019-08-01</dcterms:temporal><dcterms:temporal>2019-08-01</dcterms:temporal><dcterms:temporal>2020-05-01</dcterms:temporal><dcterms:type>XPS experiment dataset</dcterms:type><dcterms:license>CC BY 4.0</dcterms:license></metadata>