<?xml version='1.0' encoding='UTF-8'?><codeBook xmlns="ddi:codebook:2_5" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="ddi:codebook:2_5 https://ddialliance.org/Specification/DDI-Codebook/2.5/XMLSchema/codebook.xsd" version="2.5"><docDscr><citation><titlStmt><titl>STM data: Gold Nanoreliefs on Van der Waals Surfaces of InSe Semiconductor Single Crystals Obtained by High-Resolution Scanning Tunneling Microscopy Methods</titl><IDNo agency="DOI">doi:10.48788/DVUA/BCG5WO</IDNo></titlStmt><distStmt><distrbtr source="archive">DataverseUA</distrbtr><distDate>2024-10-10</distDate></distStmt><verStmt source="archive"><version date="2025-03-20" type="RELEASED">1</version></verStmt><biblCit>Karbivskyy Volodymyr; Svitlana Smolyak, 2024, "STM data: Gold Nanoreliefs on Van der Waals Surfaces of InSe Semiconductor Single Crystals Obtained by High-Resolution Scanning Tunneling Microscopy Methods", https://doi.org/10.48788/DVUA/BCG5WO, DataverseUA, V1</biblCit></citation></docDscr><stdyDscr><citation><titlStmt><titl>STM data: Gold Nanoreliefs on Van der Waals Surfaces of InSe Semiconductor Single Crystals Obtained by High-Resolution Scanning Tunneling Microscopy Methods</titl><IDNo agency="DOI">doi:10.48788/DVUA/BCG5WO</IDNo></titlStmt><rspStmt><AuthEnty affiliation="SPM&amp;RS Centre">Karbivskyy Volodymyr</AuthEnty><AuthEnty affiliation="SPM&amp;RS Centre">Svitlana  Smolyak</AuthEnty></rspStmt><prodStmt><prodPlac>Ukraine</prodPlac></prodStmt><distStmt><distrbtr source="archive">DataverseUA</distrbtr><contact affiliation="SPM&amp;RS Centre" email="sssmolyak@gmail.com">Smolyak, Svitlana</contact><depositr>Smolyak, Svitlana</depositr><depDate>2024-09-03</depDate></distStmt><holdings URI="https://doi.org/10.48788/DVUA/BCG5WO"/></citation><stdyInfo><subject><keyword xml:lang="en">Physics</keyword><keyword vocab="mscr-vocabularies" vocabURI="http://hdl.handle.net/21.T13999/EOSC-202503000465814@concept=3969a7d8-aefb-4f3e-94f6-a29959df9988">Monolayers</keyword><keyword vocab="mscr-vocabularies" vocabURI="http://hdl.handle.net/21.T13999/EOSC-202503000465814@concept=d6a73697-e837-43dd-a16e-2c34062b9ee8">Single-crystals</keyword><keyword vocab="mscr-vocabularies" vocabURI="http://hdl.handle.net/21.T13999/EOSC-202503000465814@concept=a07cd94b-ba3e-448d-a8e8-21bf561fb6be">Scanning tunnelling microscopy</keyword></subject><abstract date="2024-09-03">The mechanisms of gold nanorelief formation on the van der Waals surfaces of semiconductor single crystals were investigated using high-resolution scanning tunneling microscopy methods. Vacuum thermal deposition of Au (without sample cooling and inert gases) on the InSe (0001) surface.
The volt-ampere characteristics of the tunneling spectra of metallic nanostructures were obtained using a JSPM-4610 tunneling microscope. Electrons with different energies (from the conduction band, valence band, and localized states) participated in the tunneling process. Obtained with the help of a scanning microscope, the I-V characteristics of the tunnel contact with the surface of an arbitrary point make it possible to study the local electrical properties.</abstract><sumDscr><timePrd cycle="P1" event="start" date="2011-04-08">2011-04-08</timePrd><timePrd cycle="P1" event="end" date="2011-04-08">2011-04-08</timePrd></sumDscr><notes>Studies of the nanorelief of gold surfaces were carried out using the tunneling microscope JSPM-4610 (Japan). The working vacuum during the experiment was no worse than 10^−8 Pa. 
Plates of layered single crystals InSe, plane 0001, were used. The preparation of single-crystal surfaces was carried out by breaking the crystal in a preparation chamber at a vacuum of about 10^−8 Pa. Van der Waals chip surfaces were atomically pure with a relative surface contamination of no more than 1%.
Gold nanoreliefs on the InSe (0001) surface were obtained by vacuum thermal deposition of Au. The atomizer is a tungsten spiral cuvette with a metal weight, which is located in the middle of a metal cylinder with a 3 mm hole. The distance from the atomizer to the sample was about 7 cm. During atomization, a current of 5.0 A was passed through the tungsten spiral, which corresponded to temperatures approximately 100 degrees above the melting temperature of the metal. Application time - up to a few seconds. Metal deposition on the surface of the single crystal occurred without heating and cooling the sample, as well as without the use of gases.</notes></stdyInfo><method><dataColl><sources/></dataColl><anlyInfo/></method><dataAccs><setAvail/><useStmt/></dataAccs><othrStdyMat><relPubl><citation><titlStmt><IDNo agency="doi">10.15407/mfint.41.03.0297.</IDNo></titlStmt><biblCit>L. І. Karbivska, V. L. Karbivskii, V. A. Artemyuk, Z. D. Kovalyuk, О. Ya. Kuznetsova, S. S. Smolyak, A. I. Sobolev, and V. V. Stonis, Nanorelief of Cu and Au Layers after Their Thermal Deposition on the InSe and GaSe Single Crystals Surfaces, Metallofiz. Noveishie Tekhnol., 41, No.3: 297–311 (2019) ttps://doi.org/10.15407/mfint.41.03.0297</biblCit></citation><ExtLink URI="https://doi.org/10.15407/mfint.41.03.0297"/></relPubl></othrStdyMat></stdyDscr><otherMat ID="f168" URI="https://doi.org/10.48788/DVUA/BCG5WO/1VFELT" level="datafile"><labl>09-55-18_4.BMP</labl><txt>STM images of the surface of InSe single crystals (0001)</txt><notes level="file" type="DATAVERSE:CONTENTTYPE" subject="Content/MIME Type">image/bmp</notes></otherMat><otherMat ID="f156" URI="https://doi.org/10.48788/DVUA/BCG5WO/IJHXOQ" level="datafile"><labl>12-25-16_3.BMP</labl><txt>STM images of the surface of InSe single crystals (0001)at the temperature -187 C</txt><notes level="file" type="DATAVERSE:CONTENTTYPE" subject="Content/MIME Type">image/bmp</notes></otherMat><otherMat ID="f172" URI="https://doi.org/10.48788/DVUA/BCG5WO/49BUTJ" level="datafile"><labl>12-30-43.BMP</labl><txt>STM images of the surface of InSe single crystals (0001)at the temperature -187 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