Atomic force microscopy images of [Fe/I]n discontinious multilayers (I = SiO2, MgO, HfO2)doi:10.48788/DVUA/FJ9M9GDataverseUA2026-05-121Pazukha, Iryna; Shkurdoda, Yurii; Pylypenko, Oleksandr; Vorobiov, Serhii, 2026, "Atomic force microscopy images of [Fe/I]n discontinious multilayers (I = SiO2, MgO, HfO2)", https://doi.org/10.48788/DVUA/FJ9M9G, DataverseUA, V1Atomic force microscopy images of [Fe/I]n discontinious multilayers (I = SiO2, MgO, HfO2)doi:10.48788/DVUA/FJ9M9GPazukha, IrynaShkurdoda, YuriiPylypenko, OleksandrVorobiov, Serhii-0224U033036G6131DataverseUAPazukha, IrynaPazukha, Iryna2026-05-12PhysicsAtomic force microscopydiscontinuous multilayersThe atomic force microscopy was used to analyze the effect of the insulator matrix on the morphology of iron-insulator discontinuous multilayers [Fe/I]n/S (I = SiO2, HfO2, and MgO)AFM imagesThe atomic force microscopy (Bruker, Dimension Icon AFM) was used for the examination of the surface morphology and roughness of the discontinuous multilayer systems [Fe(dFe)/I(3)]n/S, where I = SiO2, HfO2, and MgO, n = 10 is the number of bilayer repeaters. The discontinuous multilayers were prepared by sequential magnetron sputtering at room temperature on a sapphire substrate. The base pressure in the vacuum chamber was 7.10-8 Torr. During sputtering, the chamber was filled with Ar at a constant pressure of 3 mTorr. Radiofrequency (RF) magnetron sputtering at 100 W and a deposition rate of 1 nm/min for the insulator has been used. DC magnetron sputtering at 100 W and a deposition rate of 5 nm/min for the ferromagnet has been used.[Fe(2)HfO2(3)]10_RT.jpgThe AFM image of the discontinuous multilayer systems [Fe(2)/HfO2(3)]10/S, which was prepared by sequential magnetron sputtering on the sapphire substrate at room temperature.image/jpeg[Fe(2)SiO2(3)]10_RT.jpgThe AFM image of the discontinuous multilayer systems [Fe(2)/SiO2(3)]10/S, which was prepared by sequential magnetron sputtering on the sapphire substrate at room temperature.image/jpeg[Fe(7)HfO2(3)]10_RT.jpgThe AFM image of the discontinuous multilayer systems [Fe(7)/HfO2(3)]10/S, which was prepared by sequential magnetron sputtering on the sapphire substrate at room temperature.image/jpeg[Fe(7)MgO(3)}10_RT.jpgThe AFM image of the discontinuous multilayer systems [Fe(7)/MgO(3)]10/S, which was prepared by sequential magnetron sputtering on the sapphire substrate at room temperature.image/jpeg[Fe(7)SiO2(3)]10_RT.jpgThe AFM image of the discontinuous multilayer systems [Fe(7)/SiO2(3)]10/S, which was prepared by sequential magnetron sputtering on the sapphire substrate at room temperature.image/jpeg[{Fe(2)MgO(3)]10_RT.jpgThe AFM image of the discontinuous multilayer systems [Fe(2)/MgO(3)]10/S, which was prepared by sequential magnetron sputtering on the sapphire substrate at room temperature.image/jpeg