XPS experiment dataset for crystal Tl3PbBr5doi:10.48788/DVUA/IVKESWDataverseUA2023-10-061O.Y. Khyzhun; N. M. Denysyuk, 2023, "XPS experiment dataset for crystal Tl3PbBr5", https://doi.org/10.48788/DVUA/IVKESW, DataverseUA, V1XPS experiment dataset for crystal Tl3PbBr5doi:10.48788/DVUA/IVKESWO.Y. KhyzhunN. M. DenysyukDenysyuk Natalia2012-10-02DataverseUAO.Y. Khyzhun2013-03-10Denysyuk Natalia2022-02-06ChemistryPhysicsSemiconductorselectronic structurecrystal growth methodX-ray photoelectron spectroscopyThe X-ray photoelectron core-level and valence-band spectra for pristine and Ar+-ion irradiated surfaces of a Tl3PbBr5 single crystal grown by the Bridgman–Stockbarger method have been measured. The present X-ray photoelectron spectroscopy (XPS) results reveal high chemical stability of Tl3PbBr5 single crystal surface.2012-10-022012-10-03XPS experiment datasetPreparation, etching regimes I (etching current) 17 A; V (etching voltage) 3 kV; t (etching time) 5 min; P (etching pressure) 8x10-6 mbar; theta (etching angle) 55; Preparation Ex-situ No; Preparation In-situ Ion beam cleaned with 3 kV Ar ions. Analysis source characteristic energy 1253.6 eV; analysis source power (power) 100 W; analysis source strength (emission current) 100 mA; analysis source strength; (anode voltage) 10 kV; analysis pass energy 30 eV; analysis chamber pressure 4x10-10 mbar; start energy (Kinetic Energy) Spectrum start kinetic energy; end energy (Kinetic Energy) Spectrum end kinetic energy; start energy (Binding Energy) 1000; end energy (Binding Energy) -10 eV; eV per step 0.1; Dwell time 0.1; Source Angle 45; Analyzer axis take off polar; angle 90 deg; the angle of inclination of the source to the plane of the sample at measurements of 55 deg10.1016/j.optmat.2012.12.008O.Y.Khyzhun, V.L.Bekenev, O.V.Parasyuk, S.P.Danylchuk, N.M.Denysyuk, A.O.Fedorchuk, N.AlZayed, I.V.Kityk / Single crystal growth and the electronic structure of orthorhombic Tl3PbBr5: A novel material for non-linear optics // Optical Materials - Volume 35, Issue 5, 2013, P. 1081-1089Tl3PbBr5-4d.txtcontains data obtained for common 4d - electrons, uncoated surfacetext/plainTl3PbBr5-4f.txtcontains data obtained for total 4f - electrons, uncoated surfacetext/plainTl3PbBr5-Ar_4d.txtcontains data obtained for total 4d - electrons, after surface treatment with argontext/plainTl3PbBr5-Ar_4f.txtcontains data obtained for total 4f - electrons after surface treatment with argontext/plainTl3PbBr5-Ar_Br_3d.txtcontains data obtained for Br 3d – electrons, after surface treatment with argontext/plainTl3PbBr5-Ar_Br_p.txt- contains data obtained for Br p - electrons after surface treatment with argontext/plainTl3PbBr5-Ar_C1s.txtcontains data obtained for C 1s - electrons, after surface treatment with argontext/plainTl3PbBr5-Ar_Survey.txtcontains general data obtained after surface treatment with argontext/plainTl3PbBr5-Ar_VB.txtcontains data obtained for valence band electrons after surface treatment with argontext/plainTl3PbBr5-Br_3d.txtcontains data obtained for Br 3d - electrons, uncoated surfacetext/plainTl3PbBr5-Br_p.txtcontains data obtained for Br p - electrons, uncoated surfacetext/plainTl3PbBr5-C1s.txtcontains data obtained for C 1s - electrons, uncoated surfacetext/plainTl3PbBr5-VB.txtcontains data obtained for electrons of the valence band of the uncoated surfacetext/plainTl3PbBr5_Survey.txtcontains general data obtained for an uncoated surfacetext/plain