TEM and SAED study of discontinuous metal-insulator multilayer systems Fe-SiO2 (doi:10.48788/DVUA/DNCEEM)

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Document Description

Citation

Title:

TEM and SAED study of discontinuous metal-insulator multilayer systems Fe-SiO2

Identification Number:

doi:10.48788/DVUA/DNCEEM

Distributor:

DataverseUA

Date of Distribution:

2026-03-06

Version:

1

Bibliographic Citation:

Pazukha, Iryna; Shkurdoda, Yurii; Pylypenko, Oleksandr; Komanický, Vladimír, 2026, "TEM and SAED study of discontinuous metal-insulator multilayer systems Fe-SiO2", https://doi.org/10.48788/DVUA/DNCEEM, DataverseUA, V1

Study Description

Citation

Title:

TEM and SAED study of discontinuous metal-insulator multilayer systems Fe-SiO2

Identification Number:

doi:10.48788/DVUA/DNCEEM

Authoring Entity:

Pazukha, Iryna (Sumy State University)

Shkurdoda, Yurii (Sumy State Universuty)

Pylypenko, Oleksandr (Sumy State University)

Komanický, Vladimír (P.J. Šafárik University in Košice)

Software used in Production:

-

Grant Number:

0224U033036

Grant Number:

0124U003644

Grant Number:

G6131

Distributor:

DataverseUA

Access Authority:

Pazukha, Iryna

Depositor:

Pazukha, Iryna

Date of Deposit:

2026-03-06

Holdings Information:

https://doi.org/10.48788/DVUA/DNCEEM

Study Scope

Keywords:

Physics, crystal structure, transmission electron microscopy, discontinious metal-insulator multilayers

Abstract:

The impact of annealing temperature on crystal structure and microstructure of discontinuous meal-insulator multilayers [Fe/SiO2]10/S was studied by the Selected Area Electron Diffraction (SAED) technique and Transmission Electron Microscopy (TEM)

Kind of Data:

TEM images

Kind of Data:

SAED

Notes:

A Transmission Electron Microscope (TEM) JEOL 2100F UHR operated at 200kV with a Field Emission Gun (FEG) was used to study the microstructure of discontinuous Fe-SiO2 metal-insulator multilayers. Image characterization was done in scanning/transmission mode employing a bright-field detector. Phase identification was confirmed using Selected Area Electron Diffraction (SAED). The discontinuous multilayer systems [Fe(dFe)/SiO2(3)]n/Sub, where n = 10 is the number of bilayer repeaters, were prepared by sequential magnetron sputtering on the copper mush with a carbon layer. The deposited films were annealed at different temperatures (200 and 400 С) in an Ar+N2(2%) environment using an annealing furnace with a continuous gas flow.

Methodology and Processing

Sources Statement

Data Access

Other Study Description Materials

Related Publications

Citation

Title:

Pylypenko, O., Pazukha, I., Shkurdoda, Y. et al. Heat Treatment Effect on Magnetic and Electrical Transport Properties of [Fe/SiO2]n Discontinuous Multilayers. J Supercond Nov Magn 38, 199 (2025).

Bibliographic Citation:

Pylypenko, O., Pazukha, I., Shkurdoda, Y. et al. Heat Treatment Effect on Magnetic and Electrical Transport Properties of [Fe/SiO2]n Discontinuous Multilayers. J Supercond Nov Magn 38, 199 (2025).

Other Study-Related Materials

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diff_[Fe(3)SiO2(3)]10 after annealing at 200 C-1.jpg

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Other Study-Related Materials

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diff_[Fe(3)SiO2(3)]10 after annealing at 200 C.jpg

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Other Study-Related Materials

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diff_[Fe(3)SiO2(3)]10 after deposition.jpg

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Other Study-Related Materials

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diff_[Fe(5)SiO2(3)]10 after annealin at 200 C.jpg

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Other Study-Related Materials

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diff_[Fe(5)SiO2(3)]10 after annealing at 400 C.jpg

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image/jpeg

Other Study-Related Materials

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diff_[Fe(5)SiO2(3)]10 after deposition.jpg

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Other Study-Related Materials

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TEM image_[Fe(3)_SiO2(3)]10 after annealin at 400 C.jpg

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TEM image_[Fe(3)/SiO2(3)]10 after annealing at 400 C

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Other Study-Related Materials

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TEM image_[Fe(3)_SiO2(3)]10 after annealing at 200 C.jpg

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TEM image_[Fe(3)_SiO2(3)]10 after annealing at 200 C

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Other Study-Related Materials

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TEM image_[Fe(3)_SiO2(3)]10 after depesition.jpg

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TEM image_[Fe(3)/SiO2(3)]10 after depesition

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image/jpeg

Other Study-Related Materials

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TEM image_[Fe(5)_SiO2(3)]10 after annealing at 200 C-1.jpg

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image/jpeg

Other Study-Related Materials

Label:

TEM image_[Fe(5)_SiO2(3)]10 after annealing at 200 C.jpg

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TEM image_[Fe(5)/SiO2(3)]10 after annealing at 200 C

Notes:

image/jpeg

Other Study-Related Materials

Label:

TEM image_[Fe(5)_SiO2(3)]10 after annealing at 400 C.jpg

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TEM image_[Fe(5)/SiO2(3)]10 after annealing at 400 C

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image/jpeg

Other Study-Related Materials

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TEM image_[Fe(5)_SiO2(3)]10 after depesition.jpg

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TEM image_[Fe(5)/SiO2(3)]10 after depesition

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