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Part 1: Document Description
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Citation |
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Title: |
Atomic force microscopy images of [Fe/I]n discontinious multilayers (I = SiO2, MgO, HfO2) |
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Identification Number: |
doi:10.48788/DVUA/FJ9M9G |
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Distributor: |
DataverseUA |
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Date of Distribution: |
2026-05-12 |
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Version: |
1 |
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Bibliographic Citation: |
Pazukha, Iryna; Shkurdoda, Yurii; Pylypenko, Oleksandr; Vorobiov, Serhii, 2026, "Atomic force microscopy images of [Fe/I]n discontinious multilayers (I = SiO2, MgO, HfO2)", https://doi.org/10.48788/DVUA/FJ9M9G, DataverseUA, V1 |
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Citation |
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Title: |
Atomic force microscopy images of [Fe/I]n discontinious multilayers (I = SiO2, MgO, HfO2) |
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Identification Number: |
doi:10.48788/DVUA/FJ9M9G |
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Authoring Entity: |
Pazukha, Iryna (Sumy State University) |
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Shkurdoda, Yurii (Sumy State Universuty) |
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Pylypenko, Oleksandr (Sumy State University) |
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Vorobiov, Serhii (P.J. Šafárik University in Košice) |
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Software used in Production: |
- |
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Grant Number: |
0224U033036 |
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Grant Number: |
G6131 |
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Distributor: |
DataverseUA |
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Access Authority: |
Pazukha, Iryna |
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Depositor: |
Pazukha, Iryna |
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Date of Deposit: |
2026-05-12 |
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Holdings Information: |
https://doi.org/10.48788/DVUA/FJ9M9G |
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Study Scope |
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Keywords: |
Physics, Atomic force microscopy, discontinuous multilayers |
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Abstract: |
The atomic force microscopy was used to analyze the effect of the insulator matrix on the morphology of iron-insulator discontinuous multilayers [Fe/I]n/S (I = SiO2, HfO2, and MgO) |
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Kind of Data: |
AFM images |
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Notes: |
The atomic force microscopy (Bruker, Dimension Icon AFM) was used for the examination of the surface morphology and roughness of the discontinuous multilayer systems [Fe(dFe)/I(3)]n/S, where I = SiO2, HfO2, and MgO, n = 10 is the number of bilayer repeaters. The discontinuous multilayers were prepared by sequential magnetron sputtering at room temperature on a sapphire substrate. The base pressure in the vacuum chamber was 7.10-8 Torr. During sputtering, the chamber was filled with Ar at a constant pressure of 3 mTorr. Radiofrequency (RF) magnetron sputtering at 100 W and a deposition rate of 1 nm/min for the insulator has been used. DC magnetron sputtering at 100 W and a deposition rate of 5 nm/min for the ferromagnet has been used. |
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Methodology and Processing |
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Sources Statement |
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Data Access |
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Other Study Description Materials |
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Label: |
[Fe(2)HfO2(3)]10_RT.jpg |
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Text: |
The AFM image of the discontinuous multilayer systems [Fe(2)/HfO2(3)]10/S, which was prepared by sequential magnetron sputtering on the sapphire substrate at room temperature. |
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Notes: |
image/jpeg |
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Label: |
[Fe(2)SiO2(3)]10_RT.jpg |
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Text: |
The AFM image of the discontinuous multilayer systems [Fe(2)/SiO2(3)]10/S, which was prepared by sequential magnetron sputtering on the sapphire substrate at room temperature. |
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Notes: |
image/jpeg |
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Label: |
[Fe(7)HfO2(3)]10_RT.jpg |
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Text: |
The AFM image of the discontinuous multilayer systems [Fe(7)/HfO2(3)]10/S, which was prepared by sequential magnetron sputtering on the sapphire substrate at room temperature. |
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Notes: |
image/jpeg |
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Label: |
[Fe(7)MgO(3)}10_RT.jpg |
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Text: |
The AFM image of the discontinuous multilayer systems [Fe(7)/MgO(3)]10/S, which was prepared by sequential magnetron sputtering on the sapphire substrate at room temperature. |
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Notes: |
image/jpeg |
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Label: |
[Fe(7)SiO2(3)]10_RT.jpg |
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Text: |
The AFM image of the discontinuous multilayer systems [Fe(7)/SiO2(3)]10/S, which was prepared by sequential magnetron sputtering on the sapphire substrate at room temperature. |
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Notes: |
image/jpeg |
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Label: |
[{Fe(2)MgO(3)]10_RT.jpg |
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Text: |
The AFM image of the discontinuous multilayer systems [Fe(2)/MgO(3)]10/S, which was prepared by sequential magnetron sputtering on the sapphire substrate at room temperature. |
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Notes: |
image/jpeg |