10.48788/DVUA/9EMD4YTkach, ViraViraTkach0000-0002-2403-8607Frantsevych Institute for Problems of Materials Science of NAS of UkraineO.Y. Khyzhun0000-0001-6727-643XFrantsevych Institute for Problems of Materials Science of NAS of UkraineDenysiuk Nataliia0000-0002-0492-1945Frantsevych Institute for Problems of Materials Science of NAS of UkraineDataverseUA2025ChemistryPhysicsSemiconductorsX-ray photoelectronic spectraElectronic structureTkach, ViraViraTkachFrantsevych Institute for Problems of Materials Science of NAS of UkraineUHV ANALYSIS SYSTEM Centre2014-05-102025-12-152025-12-232014-05-10/2014-08-20XPS experiment dataset10.1016/j.optmat.2014.03.0397768037037333955449667740632354693683141255070358142296700555425855171131307476image/jpegimage/jpegtext/plaintext/plainimage/jpegtext/plaintext/plainimage/jpegtext/plainimage/jpegtext/plainimage/jpegtext/plainimage/jpegtext/plaintext/plain1.1CC BY 4.0Electronic structure of Ag2CdSnS4 single crystal grown by the horizontal gradient freeze technique.For the crystal under consideration, X-ray photoelectron core-level and valence-band spectra for pristine measured. The present X-ray photoelectron spectroscopy (XPS) results indicate that Ag2CdSnS4 single crystal surface is very rigid, with respect to Ar+ ion-irradiation. For the Ag2CdSnS4 compound, the X-ray emission bands representing the energy distribution of the valence Ag 3d, Cd 3d and S 2p states were recorded and compared on a common energy scale with the XPS valence-band spectrum. Results of such a comparison indicate that the S 2p states contribute predominantly in the upper and central portions of the valence band of the Ag2CdSnS4 single crystal. In addition, our data reveal that the Ag 4d and Cd 4d states contribute mainly in the central portion and at the bottom of the valence band, respectively.Preparation, etching regimes I (etching current) 17 A; V (etching voltage) 3 kV; t (etching time) 5 min; P (etching pressure) 8x10-6 mbar; theta (etching angle) 55; Preparation Ex-situ No; Preparation In-situ Ion beam cleaned with 3 kV Ar ions. Analysis source characteristic energy 1253.6 eV; analysis source power (power) 100 W; analysis source strength (emission current) 100 mA; analysis source strength; (anode voltage) 10 kV; analysis pass energy 30 eV; analysis chamber pressure 4x10-10 mbar; start energy (Kinetic Energy) Spectrum start kinetic energy; end energy (Kinetic Energy) Spectrum end kinetic energy; start energy (Binding Energy) 1000; end energy (Binding Energy) -10 eV; eV per step 0.1; Dwell time 0.1; Source Angle 45; Analyzer axis take off polar; angle 90 deg; the angle of inclination of the source to the plane of the sample at measurements of 55 degNAS of Ukraine