10.48788/DVUA/BCG5WOKarbivskyy Volodymyr0000-0003-0412-2788SPM&RS CentreSvitlana SmolyakSvitlanaSmolyak0000-0002-5403-4092SPM&RS CentreDataverseUA2024PhysicsMonolayersSingle-crystalsScanning tunnelling microscopySmolyak, SvitlanaSvitlanaSmolyakSPM&RS Centre2024-09-032025-03-2010.15407/mfint.41.03.0297.1736718210886278648621088622108862210886218072742108862786486786486117628130347864867947864867938445275839811303862108862image/bmpimage/bmpimage/bmpimage/bmpimage/bmpimage/bmpimage/bmpimage/bmpimage/bmpimage/bmptext/plainimage/bmpimage/bmptext/plainimage/bmptext/plaintext/plainimage/bmpimage/bmpimage/bmp1.1CC0 1.0The mechanisms of gold nanorelief formation on the van der Waals surfaces of semiconductor single crystals were investigated using high-resolution scanning tunneling microscopy methods. Vacuum thermal deposition of Au (without sample cooling and inert gases) on the InSe (0001) surface. The volt-ampere characteristics of the tunneling spectra of metallic nanostructures were obtained using a JSPM-4610 tunneling microscope. Electrons with different energies (from the conduction band, valence band, and localized states) participated in the tunneling process. Obtained with the help of a scanning microscope, the I-V characteristics of the tunnel contact with the surface of an arbitrary point make it possible to study the local electrical properties.Studies of the nanorelief of gold surfaces were carried out using the tunneling microscope JSPM-4610 (Japan). The working vacuum during the experiment was no worse than 10^−8 Pa. Plates of layered single crystals InSe, plane 0001, were used. The preparation of single-crystal surfaces was carried out by breaking the crystal in a preparation chamber at a vacuum of about 10^−8 Pa. Van der Waals chip surfaces were atomically pure with a relative surface contamination of no more than 1%. Gold nanoreliefs on the InSe (0001) surface were obtained by vacuum thermal deposition of Au. The atomizer is a tungsten spiral cuvette with a metal weight, which is located in the middle of a metal cylinder with a 3 mm hole. The distance from the atomizer to the sample was about 7 cm. During atomization, a current of 5.0 A was passed through the tungsten spiral, which corresponded to temperatures approximately 100 degrees above the melting temperature of the metal. Application time - up to a few seconds. Metal deposition on the surface of the single crystal occurred without heating and cooling the sample, as well as without the use of gases.Ukraine