10.48788/DVUA/DGS7UWTkach, ViraViraTkach0000-0002-2403-8607Frantsevich Institute for Problems of Materials Science of NAS of UkraineO.Y. Khyzhun0000-0001-6727-643XFrantsevich Institute for Problems of Materials Science of NAS of UkraineN.M. Denysyuk0000-0002-0492-1945Frantsevich Institute for Problems of Materials Science of NAS of UkraineLuzhnyi Ivan VasyliovychIvanyi Ivan Vasyliovych0000-0001-6727-643XFrantsevich Institute for Problems of Materials Science of NAS of UkraineKopylova Kateryna IhorivnaKaterynaKateryna Ihorivna0000-0001-6796-390XFrantsevich Institute for Problems of Materials Science of NAS of UkraineDataverseUA2026ChemistryEngineeringPhysicsSemiconductorsX-ray photoelectronic spectraElectronic structureSemiconductorsCondensed Matter PhysicsSurface ScienceTkach Vira AndriyvnaVira Vira AndriyvnaFrantsevich Institute for Problems of Materials Science of NAS of UkraineFrantsevych Institute for Problems of Materials Science of NAS of UkraineN.A.S. of UkraineDepartment 47 of Surface Spectroscopy of Novel Materials, Frantsevich Institute for Problems of Materials Science2019-09-012026-04-082026-08-202019-08-01/2020-05-01XPS experiment dataset10.1016/j.chemphys.2020.110821760612634965107283014436322175359231036520656613629687294678005664646479993349732130412539727986image/jpegimage/jpegimage/jpegtext/plaintext/plainimage/jpegtext/plainimage/jpegtext/plainimage/jpegtext/plainimage/jpegtext/plainimage/jpegtext/plainimage/jpegtext/plaintext/plaintext/plain1.1CC BY 4.0The electronic structure and surface chemical states of a Cu2HgGeSe4 single crystal, grown by the Bridgman–Stockbarger method, were investigated using X-ray photoelectron spectroscopy (XPS) for pristine and Ar+ ion-irradiated surfaces. High-resolution core-level XPS spectra (Cu 2p, Hg 4f, Ge 3d, Se 3d, Se 3p) and valence-band spectra were recorded before and after Ar+ ion sputtering to evaluate the core-level binding energies, chemical state preservation, and structural stability of the Cu2HgGeSe4 surface under ion-beam treatment.**In-situ Surface Preparation & Ion Etching Regimes:** * Preparation Mode: In-situ ion-beam cleaning with Ar+ ions (Ex-situ: No) * Ion Gun Voltage (V): 3 kV * Etching Current (I): 17 uA * Etching Time (t): 5 min * Etching Pressure (P): 8x10^-6 mbar * Etching Angle (theta): 55 deg **XPS Measurement & Spectrometer Parameters:** * System/Analyzer: UHV-Analysis-System SPECS (Germany), Hemispherical Analyzer PHOIBOS 150 * Excitation Source: Mg K-alpha radiation * Characteristic Energy: 1253.6 eV * Anode Voltage: 10 kV * Emission Current: 100 mA * Source Power: 100 W * Analysis Chamber Pressure: 4x10^-10 mbar * Pass Energy: 30 eV * Energy Range (Binding Energy): 1000 eV to -10 eV * Step Size: 0.1 eV/step * Dwell Time: 0.1 s * Geometry: Source Angle: 45 deg; Source-to-sample plane angle: 55 deg; Analyzer axis take-off polar angle: 90 deg (normal emission relative to sample surface)Kyiv, UkraineNAS of Ukraine