10.48788/DVUA/IVKESWO.Y. Khyzhun0000-0002-2403-8607Frantsevych Institute for Problems of Materials Science of NAS of UkraineN. M. Denysyuk0000-0002-0492-1945Frantsevych Institute for Problems of Materials Science of NAS of UkraineDataverseUA2023ChemistryPhysicsSemiconductorselectronic structurecrystal growth methodX-ray photoelectron spectroscopyO.Y. KhyzhunFrantsevych Institute for Problems of Materials Science of NAS of UkraineDenysyuk Natalia2013-03-102012-10-022022-02-062024-11-252012-10-02/2012-10-03XPS experiment dataset10.1016/j.optmat.2012.12.008125307218120527252425338574161133294611423838063727475113245text/plaintext/plaintext/plaintext/plaintext/plaintext/plaintext/plaintext/plaintext/plaintext/plaintext/plaintext/plaintext/plaintext/plain1.1CC0 1.0The X-ray photoelectron core-level and valence-band spectra for pristine and Ar+-ion irradiated surfaces of a Tl3PbBr5 single crystal grown by the Bridgman–Stockbarger method have been measured. The present X-ray photoelectron spectroscopy (XPS) results reveal high chemical stability of Tl3PbBr5 single crystal surface.Preparation, etching regimes I (etching current) 17 A; V (etching voltage) 3 kV; t (etching time) 5 min; P (etching pressure) 8x10-6 mbar; theta (etching angle) 55; Preparation Ex-situ No; Preparation In-situ Ion beam cleaned with 3 kV Ar ions. Analysis source characteristic energy 1253.6 eV; analysis source power (power) 100 W; analysis source strength (emission current) 100 mA; analysis source strength; (anode voltage) 10 kV; analysis pass energy 30 eV; analysis chamber pressure 4x10-10 mbar; start energy (Kinetic Energy) Spectrum start kinetic energy; end energy (Kinetic Energy) Spectrum end kinetic energy; start energy (Binding Energy) 1000; end energy (Binding Energy) -10 eV; eV per step 0.1; Dwell time 0.1; Source Angle 45; Analyzer axis take off polar; angle 90 deg; the angle of inclination of the source to the plane of the sample at measurements of 55 deg