{"@context":"http://schema.org","@type":"Dataset","@id":"https://doi.org/10.48788/DVUA/BCG5WO","identifier":"https://doi.org/10.48788/DVUA/BCG5WO","name":"STM data: Gold Nanoreliefs on Van der Waals Surfaces of InSe Semiconductor Single Crystals Obtained by High-Resolution Scanning Tunneling Microscopy Methods","creator":[{"@type":"Person","affiliation":{"@type":"Organization","name":"SPM&RS Centre"},"sameAs":"https://orcid.org/0000-0003-0412-2788","@id":"https://orcid.org/0000-0003-0412-2788","identifier":"https://orcid.org/0000-0003-0412-2788","name":"Karbivskyy Volodymyr"},{"@type":"Person","givenName":"Svitlana","familyName":"Smolyak","affiliation":{"@type":"Organization","name":"SPM&RS Centre"},"sameAs":"https://orcid.org/0000-0002-5403-4092","@id":"https://orcid.org/0000-0002-5403-4092","identifier":"https://orcid.org/0000-0002-5403-4092","name":"Svitlana Smolyak"}],"author":[{"@type":"Person","affiliation":{"@type":"Organization","name":"SPM&RS Centre"},"sameAs":"https://orcid.org/0000-0003-0412-2788","@id":"https://orcid.org/0000-0003-0412-2788","identifier":"https://orcid.org/0000-0003-0412-2788","name":"Karbivskyy Volodymyr"},{"@type":"Person","givenName":"Svitlana","familyName":"Smolyak","affiliation":{"@type":"Organization","name":"SPM&RS Centre"},"sameAs":"https://orcid.org/0000-0002-5403-4092","@id":"https://orcid.org/0000-0002-5403-4092","identifier":"https://orcid.org/0000-0002-5403-4092","name":"Svitlana Smolyak"}],"datePublished":"2024-10-10","dateModified":"2025-03-20","version":"1","description":"The mechanisms of gold nanorelief formation on the van der Waals surfaces of semiconductor single crystals were investigated using high-resolution scanning tunneling microscopy methods. Vacuum thermal deposition of Au (without sample cooling and inert gases) on the InSe (0001) surface. The volt-ampere characteristics of the tunneling spectra of metallic nanostructures were obtained using a JSPM-4610 tunneling microscope. Electrons with different energies (from the conduction band, valence band, and localized states) participated in the tunneling process. Obtained with the help of a scanning microscope, the I-V characteristics of the tunnel contact with the surface of an arbitrary point make it possible to study the local electrical properties.","keywords":["Physics","Monolayers","Single-crystals","Scanning tunnelling microscopy"],"citation":[{"@type":"CreativeWork","name":"L. І. Karbivska, V. L. Karbivskii, V. A. Artemyuk, Z. D. Kovalyuk, О. Ya. Kuznetsova, S. S. Smolyak, A. I. Sobolev, and V. V. Stonis, Nanorelief of Cu and Au Layers after Their Thermal Deposition on the InSe and GaSe Single Crystals Surfaces, Metallofiz. 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