Description
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The mechanisms of gold nanorelief formation on the van der Waals surfaces of semiconductor single crystals were investigated using high-resolution scanning tunneling microscopy methods. Vacuum thermal deposition of Au (without sample cooling and inert gases) on the InSe (0001) surface. The volt-ampere characteristics of the tunneling spectra of metallic nanostructures were obtained using a JSPM-4610 tunneling microscope. Electrons with different energies (from the conduction band, valence band, and localized states) participated in the tunneling process. Obtained with the help of a scanning microscope, the I-V characteristics of the tunnel contact with the surface of an arbitrary point make it possible to study the local electrical properties. (2024-09-03)
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Related Publication
| L. І. Karbivska, V. L. Karbivskii, V. A. Artemyuk, Z. D. Kovalyuk, О. Ya. Kuznetsova, S. S. Smolyak, A. I. Sobolev, and V. V. Stonis, Nanorelief of Cu and Au Layers after Their Thermal Deposition on the InSe and GaSe Single Crystals Surfaces, Metallofiz. Noveishie Tekhnol., 41, No.3: 297–311 (2019) ttps://doi.org/10.15407/mfint.41.03.0297
doi: 10.15407/mfint.41.03.0297. |
Notes
| Studies of the nanorelief of gold surfaces were carried out using the tunneling microscope JSPM-4610 (Japan). The working vacuum during the experiment was no worse than 10^−8 Pa. Plates of layered single crystals InSe, plane 0001, were used. The preparation of single-crystal surfaces was carried out by breaking the crystal in a preparation chamber at a vacuum of about 10^−8 Pa. Van der Waals chip surfaces were atomically pure with a relative surface contamination of no more than 1%. Gold nanoreliefs on the InSe (0001) surface were obtained by vacuum thermal deposition of Au. The atomizer is a tungsten spiral cuvette with a metal weight, which is located in the middle of a metal cylinder with a 3 mm hole. The distance from the atomizer to the sample was about 7 cm. During atomization, a current of 5.0 A was passed through the tungsten spiral, which corresponded to temperatures approximately 100 degrees above the melting temperature of the metal. Application time - up to a few seconds. Metal deposition on the surface of the single crystal occurred without heating and cooling the sample, as well as without the use of gases. |