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Persistent Identifier
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doi:10.48788/DVUA/JSPAOF |
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Publication Date
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2026-08-24 |
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Title
| Electronic structure and optical properties of Cs2HgI4: Experimental study and band-structure DFT calculations |
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Subtitle
| High-Resolution Core-Level, Valence-Band, and Survey Spectra of Unmodified and Ion-Sputtered Surfaces |
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Alternative Title
| Дослідження електронного стану та остовних рівнів монокристала Cs2HgI4 методом РФЕС |
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Author
| Tkach, Vira (Frantsevich Institute for Problems of Materials Science of NAS of Ukraine) - ORCID: 0000-0002-2403-8607
O.Y. Khyzhun (Frantsevich Institute for Problems of Materials Science of NAS of Ukraine) - ORCID: 0000-0001-6727-643X
N.M. Denysіuk (Frantsevich Institute for Problems of Materials Science of NAS of Ukraine) - ORCID: 0000-0002-0492-1945
Luzhnyi Ivan Vasyliovych (Frantsevich Institute for Problems of Materials Science of NAS of Ukraine) - ORCID: 0000-0003-3809-7517 |
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Point of Contact
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Use email button above to contact.
Tkach, Vira (Frantsevich Institute for Problems of Materials Science of NAS of Ukraine) |
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Description
| Experimental X-ray photoelectron spectroscopy (XPS) dataset collected for a Cs2HgI4 single crystal synthesized via the vertical Bridgman–Stockbarger method. The dataset encompasses wide-range survey energy scans, high-resolution core-level regions (Cs 3d, Hg 4f, and I 3d), as well as low-binding-energy valence-band spectra. Measurements were conducted both on the pristine surface (cleaved in ultra-high vacuum) and following surface bombardment with low-energy Ar+ ions. The deposited files include digitized numerical spectral curves and high-quality vector plots suitable for analyzing chemical states, stoichiometry, and electronic density of states. (2020-08-21) |
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Subject
| Chemistry; Engineering; Physics |
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Keyword
| X-ray photoelectron spectroscopy (XPS) (IUPAC Gold Book) https://goldbook.iupac.org/terms/view/X06716
Semiconductors (Wikidata) https://www.wikidata.org/wiki/Q11456
Electronic structure (Wikidata) https://www.wikidata.org/wiki/Q5358432
Cs2HgI4
Ternary halide semiconductor
Core-level photoelectron spectra
Valence band density of states
Ion sputtering effect |
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Topic Classification
| Condensed matter physics (Wikidata) https://www.wikidata.org/wiki/Q214781
Surface science (Wikidata) https://www.wikidata.org/wiki/Q373184
Semiconductor (Wikidata) https://www.wikidata.org/wiki/Q11456 |
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Related Publication
| Lavrentyev, A.A., Gabrelian, B.V., Vu, V.T., Parasyuk, O.V., Fedorchuk, A.O., and Khyzhun, O.Y. (2015). Electronic structure and optical properties of Cs2HgI4: Experimental study and band-structure DFT calculations. Optical Materials, 42, 351–360. https://doi.org/10.1016/j.optmat.2015.01.026 doi: 10.1016/j.optmat.2015.01.026 https://doi.org/10.1016/j.optmat.2015.01.026 |
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Notes
| Material: Cs2HgI4 single crystal; Crystal-growth method: vertical Bridgman–Stockbarger technique; Surface condition: pristine (cleaved in UHV) and Ar+-ion irradiated; Deposited spectral regions: survey, Cs 3d, Hg 4f, I 3d, and valence band. System: SPECS UHV-Analysis-System (Germany); Electron energy analyzer: PHOIBOS 150 hemispherical analyzer; Excitation source: Mg K-alpha radiation (photon energy: 1253.6 eV); X-ray source power: 100 W (anode voltage: 10 kV, emission current: 10 mA); Analyzer pass energy: 30 eV; Analysis chamber pressure: approximately 4 × 10^-10 mbar; Binding-energy range: 1000 to -10 eV; Energy step: 0.1 eV; Dwell time: 0.1 s; Analyzer take-off angle: 90° relative to the sample surface (normal emission). The spectrometer energy scale was calibrated using the Au 4f7/2 and Cu 2p3/2 lines of pure gold and copper reference samples at binding energies of 84.00 ± 0.05 eV and 932.66 ± 0.05 eV, respectively. Charging-related energy shifts were corrected using the C 1s line of adventitious hydrocarbon contamination set at 284.8 eV. Samples were mounted on a molybdenum sample holder. |
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Language
| English |
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Producer
| Frantsevych Institute for Problems of Materials Science of NAS of Ukraine (National Academy of Sciences of Ukraine) (IPM NASU / ІПМ НАНУ) https://www.ipms.kyiv.ua/?utm_source=chatgpt.com |
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Production Date
| 2014-11-20 |
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Production Location
| Kyiv, Ukraine |
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Contributor
| Research Group : UHV ANALYSIS SYSTEM Centre, Department No. 47 of Surface Spectroscopy of Novel Materials, Frantsevich Institute for Problems of Materials Science of NAS of Ukraine |
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Funding Information
| National Academy of Sciences of Ukraine |
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Distributor
| DataverseUA (National Academy of Sciences of Ukraine) (DataverseUA) https://opendata.nas.gov.ua/ |
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Distribution Date
| 2026-08-26 |
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Depositor
| Tkach, Vira |
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Deposit Date
| 2026-08-21 |
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Time Period
| Start Date: 2014-09-20 ; End Date: 2014-11-20 |
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Date of Collection
| Start Date: 2014-09-01 ; End Date: 2014-11-20 |
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Data Type
| XPS experiment dataset |
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Software
| Primary experimental XPS spectra (survey, Cs 3d, Hg 4f, I 3d core levels, and valence band) recorded for pristine and ion-etched Cs2HgI4 single crystal surfaces using a SPECS UHV system equipped with a PHOIBOS 150 analyzer., Version: 9.0 |
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Data Source
| Primary experimental XPS spectra (survey, Cs 3d, Hg 4f, I 3d core levels, and valence band) recorded for pristine and ion-etched Cs2HgI4 single crystal surfaces using a SPECS UHV system equipped with a PHOIBOS 150 analyzer. |