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Persistent Identifier
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doi:10.48788/DVUA/PIPDML |
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Publication Date
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2025-12-23 |
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Title
| High-Resolution XPS Dataset for TlHgBr₃ Single Crystals |
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Subtitle
| Core-level and valence-band spectra of the TlHgBr₃ surface |
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Alternative Title
| High-Resolution X-ray Photoelectron Spectroscopy (XPS) Data of TlHgBr₃ Single Crystal |
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Author
| O.Y. Khyzhun (Frantsevych Institute for Problems of Materials Science of NAS of Ukraine) - ORCID: 0000-0001-6727-643X
N.M. Denysiuk (Frantsevych Institute for Problems of Materials Science of NAS of Ukraine) - ORCID: 0000-0002-0492-1945
O.O. Foia (Frantsevych Institute for Problems of Materials Science of NAS of Ukraine) - ORCID: 0009-0005-0814-5911 |
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Point of Contact
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Use email button above to contact.
N.M. Denysiuk (Frantsevych Institute for Problems of Materials Science of NAS of Ukraine) |
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Description
| The obtained X-ray photoelectron spectroscopy (XPS) results provide detailed information on the electron energy distribution, their relationship with the chemical states of atoms, and the electronic structure of the material surface. High-resolution measurements of core-level and valence-band spectra were performed for the TIHgBr₃ single crystal grown using the Bridgman–Stockbarger method. This dataset allows analysis of the chemical composition and electronic structure of the TIHgBr₃ surface, assessment of the stability of elemental chemical states, and investigation of surface properties. The dataset contains experimental XPS data of the pristine surface only, suitable for comparative analysis and modeling of the electronic structure of halide materials. Spectra after Ar⁺-ion irradiation are not included. (2025-12-05) |
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Subject
| Chemistry; Physics; Other |
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Keyword
| halide semiconductor https://dictionary.cambridge.org/dictionary/english/semiconductor
X-ray photoelectron spectroscopy (XPS https://www.chemicool.com/definition/x_ray_photoelectron_spectroscopy_xps.html?utm_source=chatgpt.com
Single crystal https://dictionary.cambridge.org/dictionary/english/crystal
Valence band https://dictionary.cambridge.org/dictionary/english/valence-band?q=Valence+band
Core levels
Electronic structure https://lnk.ua/mkANNEi7T
Chemical state
TIHgBr₃ |
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Topic Classification
| Physical Sciences https://api.openaire.eu/vocabularies/dnet:fos/0103%20physical%20sciences
Materials Science https://datascience.codata.org/articles/dsj-2021-018?utm_source=chatgpt.com |
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Related Publication
| Single crystal growth, structure and properties of TlHgBr₃. P. Demchenko, O.Y. Khyzhun, P.M. Fochuk, S.I. Levkovets, G.L. Myronchuk, O.V. Parasyuk/ Optical Materials, Volume 49, November 2015, Pages 94–99. DOI / URL: https://doi.org/10.1016/j.optmat.2015.08.026 doi: 10.1016/j.optmat.2015.08.026 https://doi.org/10.1016/j.optmat.2015.08.026
Electronic structure and basic optical constants of TlHgBr₃: Density functional theory calculations. Tuan V. Vu, Anatoliy A. Lavrentyev, Boris V. Gabrelian, Hien D. Tong, Hai L. Luong, Oleg V. Parasyuk, Yuri M. Kogut, Oleg Y. Khyzhun. Optical Materials, Volume 86, December 2018, Pages 191–197. DOI / URL: https://doi.org/10.1016/j.optmat.2018.10.019 doi: 10.1016/j.optmat.2018.10.019 https://doi.org/10.1016/j.optmat.2018.10.019 |
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Notes
| Preparation, etching regimes I (etching current) 17 A; V (etching voltage) 3 kV; t (etching time) 5 min; P (etching pressure) 8x10-6 mbar; theta (etching angle) 55; Preparation Ex-situ No; Preparation In-situ Ion beam cleaned with 3 kV Ar ions. Analysis source characteristic energy 1253.6 eV; analysis source power (power) 100 W; analysis source strength (emission current) 10 mA; analysis source strength; (anode voltage) 10 kV; analysis pass energy 30 eV; analysis chamber pressure 4x10-10 mbar; start energy (Kinetic Energy) Spectrum start kinetic energy; end energy (Kinetic Energy) Spectrum end kinetic energy; start energy (Binding Energy) 1000; end energy (Binding Energy) -10 eV; eV per step 0.1; Dwell time 0.1; Source Angle 45; Analyzer axis take off polar; angle 90 deg; the angle of inclination of the source to the plane of the sample at measurements of 55 deg |
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Language
| English |
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Producer
| Frantsevych Institute for Problems of Materials Science of NAS of Ukraine (N.A.S. of Ukraine) (IPM NASU / ІПМ НАНУ) https://www.ipms.kyiv.ua/?utm_source=chatgpt.com |
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Production Location
| Ukraine, Kyiv |
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Contributor
| Research Group : UHV ANALYSIS SYSTEM Centre, Department No. 47 of Surface Spectroscopy of Novel Materials, Frantsevich Institute for Problems of Materials Science of NAS of Ukraine |
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Funding Information
| Синтез та дослідження особливостей електронної будови нанорозмірних карбідних, нітридних, оксидних фаз, а також високопористих вуглецевих матеріалів: 0111U002435
NAS of Ukraine
This work was partially supported by the Polish National Science Centre, Project No. 2011/01/B/ST7/06194. |
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Depositor
| Denysiuk, Nataliia |
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Deposit Date
| 2025-12-15 |
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Date of Collection
| Start Date: 2014-02-01 ; End Date: 2014-02-15 |
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Data Type
| XPS experiment dataset |